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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS Designed for use in power switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION PMD16K60/80/100 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS PMD16K60 PMD16K80 VCBO IN Collector-base voltage VCEO Collector-emitter voltage CHA ES NG PMD16K60 PMD16K80 PMD16K100 PMD16K100 MIC E Open base Open collector Open emitter OND TOR UC 60 80 100 60 80 100 5 20 40 0.5 VALUE UNIT V V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage V A A A W ae ae Collector current Collector current(peak) Base current Power dissipation Max. operating Junction temperature Storage temperature TC=25ae 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER PMD16K60 V(BR)CEO Collector-emitter breakdown voltage PMD16K80 PMD16K100 VCEsat VBEsat VBE hFE ICER IEBO fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage DC current gain Collector cut-off current IC=10A ;IB=40mA IC=10A ;IB=40mA IC=10A ; VCE=3V IC=10A ; VCE=3V VCE=Rated VCEO; RBE=| TC=150ae IC=0.1A ; IB=0 CONDITIONS PMD16K60/80/100 SYMBOL MIN 60 80 100 TYP. MAX UNIT V 2.0 2.8 2.8 1000 20000 V V V IN Emitter cut-off current Transition frequency Output capacitance ANG CH MIC E SE VEB=5V; IC=0 IC=7A ; VCE=3V;f=1.0kHz DUC ON 4.0 TOR 1.0 5.0 2.0 400 mA mA MHz pF IE=0 ; VCB=10V;f=1.0MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE PMD16K60/80/100 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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